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In this research work, the electrical characteristics of the double gate FinFET have been simulated for different channel materials. Three materials, Silicon (Si), Germanium (Ge) and Silicon-Germanium (SiGe) has been considered for simulating the drain current VS gate voltage of the FinFET. The characteristics of the threshold voltage of FinFET have also been studied for these three channel materials. The channel length has been considered 50nm.

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iaset123

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