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About this Engineering article
Mechanism of Electron Trapping and Characteristics of Traps in $\hbox{HfO}_{2}$ Gate Stacks by Bersuker, Gennadi; Sim, J. H.; Park, Chang Seo; Young, Chadwin D.; Nadkarni, Suvid V.; Choi, Rino; Lee, Byoung Hun is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Bersuker, Gennadi; Sim, J. H.; Park, Chang Seo; Young, Chadwin D.; Nadkarni, Suvid V.; Choi, Rino; Lee, Byoung Hun
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 1530-4388)
- Published
- 2007
- Language
- EN
- Field
- Engineering (Physical Sciences)