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About this Engineering article
The Effect of General Strain on the Band Structure and Electron Mobility of Silicon by Ungersboeck, E.; Dhar, S.; Karlowatz, G.; Sverdlov, V.; Kosina, H.; Selberherr, S. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Ungersboeck, E.; Dhar, S.; Karlowatz, G.; Sverdlov, V.; Kosina, H.; Selberherr, S.
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0018-9383)
- Published
- 2007
- Field
- Engineering (Physical Sciences)