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Growth and characterization of (La,Sr)(Al,Ta)O3 single crystals as substrates for GaN epitaxial growth by Kiyoshi Shimamura; Hideo Tabata; Hiroaki Takeda; Vladimir V. Kochurikhin; Tsuguo Fukuda is a Engineering article available to read on EtoBox.
What is Growth and characterization of (La,Sr)(Al,Ta)O3 single crystals as substrates for GaN epitaxial growth about?
We have successfully grown 11 1 12 oriented (La,Sr)(Al,Ta)O (LSAT) mixed-perovskite single crystals by the Czochralski method. Compositional uniformity and coloring phenomena are discussed in relation to the growth conditions. Since LSAT single crystals have excellent lattice matching with GaN, they are promising as new substrates for the growth of high-quality GaN epitaxial layers.
Who reads Growth and characterization of (La,Sr)(Al,Ta)O3 single crystals as substrates for GaN epitaxial growth?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Kiyoshi Shimamura; Hideo Tabata; Hiroaki Takeda; Vladimir V. Kochurikhin; Tsuguo Fukuda
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-0248)
- Published
- 1998
- Language
- EN
- Field
- Engineering (Physical Sciences)