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Polycrystalline ZnO thin films on Si (1 0 0) deposited by filtered cathodic vacuum arc by X.L Xu; S.P Lau; J.S Chen; G.Y Chen; B.K Tay is a Engineering article available to read on EtoBox.

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Polycrystalline ZnO thin films have been grown on Si (1 0 0) substrate using filtered cathodic vacuum arc technique. Room temperature photoluminescence reveals a strong near-band edge emission at 378 nm and a weak green emission at around 510 nm from the ZnO film deposited at 2308C. The intensity ratio of the near-band edge emission to green emission is about 100 indicating the high quality of the film. An additional emission at 420 nm, corresponding to the interstitial oxygen level, is also observed from the film grown at 4308C. The ZnO thin films were characterized by X-ray diffraction, X-ray photoelectron spectroscopy, Raman spectroscopy, as well as transmittance measurement.

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Author

X.L Xu; S.P Lau; J.S Chen; G.Y Chen; B.K Tay

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-0248)

Published

2001

Language

EN

Field

Engineering (Physical Sciences)