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RF Power LDMOS Transistor: N - Channel Enhancement - Mode Lateral MOSFET by Anonymous l0Egez is a document available to read on EtoBox.

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This document provides information about an RF power LDMOS transistor designed for cellular base station applications from 1805 to 1880 MHz. It can output 50 watts on average and has a drain efficiency of around 32%. Tables provide the maximum ratings, thermal characteristics, ESD protection, and electrical characteristics of the transistor.

Author

Anonymous l0Egez

Language

EN