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Improved ITO thin films with a thin ZnO buffer layer by sputtering by X.W Sun; L.D Wang; H.S Kwok is a Engineering article available to read on EtoBox.

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In this paper, we report a buffering method of improving the quality of ITO thin ®lms on glass by r.f. magnetron sputtering. By applying a ZnO buffer before the ITO deposition in the same run of sputtering, ITO ®lms showed single (111)-oriented highly textured structure, while ITO ®lms showed mixed-oriented polycrystalline structure on bare glass. A design of experiment was taken out to minimize the resistivity of ITO ®lms in the deposition parameter space (oxygen ratio, total gas pressure, and temperature). Resistance measurements showed that the ITO ®lms with ZnO buffers had a remarkable 50% decrease of resistivity comparing to those without ZnO buffers at optimized deposition condition. Room-temperature Hall effect measurements showed that the decrease in resistivity comes from a large increase of mobility and a slight increase of carrier density after forming gas annealing. The ZnO/glass may be a good alternative substrate to bare glass for producing high quality ITO ®lms for advanced electro-optic applications.

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Author

X.W Sun; L.D Wang; H.S Kwok

Publisher

Elsevier Science; Elsevier ; Elsevier Sequoia; Elsevier BV (ISSN 0040-6090)

Published

2000

Language

EN

Field

Engineering (Physical Sciences)