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About this Engineering article
Enhanced Electron Mobility in the Inverted High Electron Mobility Transistor Structure by Two-Step Molecular Beam Epitaxy (MBE) Growth by Washima, Mineo; Mishima, Tomoyoshi; Kudo, Makoto is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Washima, Mineo; Mishima, Tomoyoshi; Kudo, Makoto
- Publisher
- Institute of Pure and Applied Physics; Japan Society of Applied Physics; IOP Publishing (ISSN 0021-4922)
- Published
- 1994
- Field
- Engineering (Physical Sciences)
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