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Controlled Coupling and Occupation of Silicon Atomic Quantum Dots by Haider, M. Baseer; Pitters, Jason L; DiLabio, Gino A.; Livadaru, Lucian; Mutus, Josh Y; Wolkow, Robert A. is a scholarly article available to read on EtoBox.

What is Controlled Coupling and Occupation of Silicon Atomic Quantum Dots about?

It is discovered that the zero-dimensional character of the silicon atom dangling bond (DB) state allows controlled formation and occupation of a new form of quantum dot assemblies. Whereas on highly doped n-type substrates isolated DBs are negatively charged, it is found that Coulomb repulsion causes DBs separated by less than ~2 nm to experience reduced localized charge. The unoccupied states so created allow a previously unobserved electron tunnel-coupling of DBs, evidenced by a pronounced change in the time-averaged view recorded by scanning tunneling microscopy. Direct control over net electron occupation and tunnel-coupling of multi-DB ensembles through separation controlled is demonstrated. Through electrostatic control, it is shown that a pair of tunnel-coupled DBs can be switched from a symmetric bi-stable state to one exhibiting an asymmetric electron occupation. Similarly, the setting of an antipodal state in a square assembly of four DBs is achieved, demonstrating at room temperature the essential building block of a quantum cellular automata device.

Author

Haider, M. Baseer; Pitters, Jason L; DiLabio, Gino A.; Livadaru, Lucian; Mutus, Josh Y; Wolkow, Robert A.

Published

2008

Language

EN