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Gas sensing properties in epitaxial SnO2 films grown on TiO2 single crystals with various orientations by Dai Hong Kim; Won-Sik Kim; Sung Bo Lee; Seong-Hyeon Hong is a Engineering article available to read on EtoBox.

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Epitaxial SnO 2 films were deposited on TiO 2 single crystals with various orientations by plasma enhanced atomic layer deposition (PEALD), and their structural characteristics and gas sensing properties were investigated, particularly focusing on the crystallographic orientation dependence of H 2 gas response. Dibutyltindiacetate (DBTDA) was used as Sn source, and (1 0 0), (0 0 1), (1 1 0), and (1 0 1) TiO 2 were employed as substrates for SnO 2 deposition. All the SnO 2 films were ∼90 nm thick after 1000 ALD cycles and epitaxially grown on TiO 2 substrates, which were confirmed by X-ray pole figure and high resolution transmission electron microscopy (HRTEM). Differently oriented epitaxial SnO 2 films showed the different H 2 gas response and different temperature dependence of gas response. The (1 0 1) SnO 2 films grown on (1 0 1) TiO 2 exhibited the highest H 2 gas response of ∼380 toward 1000 ppm H 2 /air at 400 • C, which was associated with the different temperature dependence of resistance in (1 0 1) film rather than the microstructural characteristics and chemical composition compared to the other films.

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Author

Dai Hong Kim; Won-Sik Kim; Sung Bo Lee; Seong-Hyeon Hong

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0925-4005)

Published

2010

Language

EN

Field

Engineering (Physical Sciences)