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Near-infrared intersubband absorption in InGaAs/AlAsSb grown by molecular beam epitaxy by Teruo Mozume; Haruhiko Yoshida; Arup Neogi; Makoto Kudo is a Engineering article available to read on EtoBox.

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We report here the molecular beam epitaxy growth and the intersubband absorption measurements of In-GaAs/AlAsSb multi-quantum wells lattice matched to InP substrate. Polarization-resolved absorption spectra were measured either with a conventional optical absorption measurement system or a Fourier-transform infrared spectrometer. We have observed an intersubband transition at wavelength as short as 1.45 m (0.855 eV) in 2.0 nm thick InGaAs/AlAsSb quantum wells. This is the shortest quantum well intersubband absorption wave length ever reported in any materials system.

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Author

Teruo Mozume; Haruhiko Yoshida; Arup Neogi; Makoto Kudo

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-0248)

Published

1999

Language

EN

Field

Engineering (Physical Sciences)