Opening book details…
About this Engineering article
New interface state density extraction method applicable to peaked and high-density distributions for Ge MOSFET development by Martens, K.; Brice De Jaeger, ; Bonzom, R.; Van Steenbergen, J.; Meuris, M.; Groeseneken, G.; Maes, H. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Martens, K.; Brice De Jaeger, ; Bonzom, R.; Van Steenbergen, J.; Meuris, M.; Groeseneken, G.; Maes, H.
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0741-3106)
- Published
- 2006
- Field
- Engineering (Physical Sciences)