Opening book details…
About this Engineering article
A Stagnant Layer Model for the Epitaxial Growth of Silicon from Silane in a Horizontal Reactor by Eversteyn, F. C.; Severin, P. J. W.; v. d. Brekel, C. H. J.; Peek, H. L. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Eversteyn, F. C.; Severin, P. J. W.; v. d. Brekel, C. H. J.; Peek, H. L.
- Publisher
- The Electrochemical Society; Electrochemical Society, Inc. (ISSN 0013-4651)
- Published
- 1970
- Field
- Engineering (Physical Sciences)
More by Eversteyn, F. C.; Severin, P. J. W.; v. d. Brekel, C. H. J.; Peek, H. L.
Browse all works by Eversteyn, F. C.; Severin, P. J. W.; v. d. Brekel, C. H. J.; Peek, H. L.