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Electrical characterization of n -GaN epilayers using transparent polyaniline Schottky contacts by Yoshitaka Nakano; Nobuyuki Matsuki; Yoshihiro Irokawa; Masatomo Sumiya is a Engineering article available to read on EtoBox.

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## Abstract We have successfully investigated deep levels of __n__ ‐GaN epilayers with high carrier concentrations by using transparent polyaniline Schottky conctacts. High quality Schottky barrier diodes fabricated showed a capacitance dispersion phenomenon at ∼10 kHz, which is characteristic of polyaniline. Deep‐level optical spectroscopy measurements above this cutoff frequency newly revealed a specific deep levels located at ∼1.70 eV below the conduction band, being different from the deep levels commonly observed in GaN. This deep level showed a significant increase in steady‐state photocapacitance with a decrease in probing depth range. Therefore, the 1.70 eV level probably stems from the near‐surface region of the __n__ ‐GaN rather than the bulk region. This is the abstract. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Author

Yoshitaka Nakano; Nobuyuki Matsuki; Yoshihiro Irokawa; Masatomo Sumiya

Publisher

John Wiley and Sons; Wiley (John Wiley & Sons); Wiley - V C H Verlag GmbbH & Co.; Wiley (ISSN 1862-6351)

Published

2010

Language

EN

Field

Engineering (Physical Sciences)