About this scholarly article

2017 2nd IEEE International Conference on Recent Trends in Electronics, Information & Communication Technology (RTEICT) - Analytical demonstration of gate leakage current in AlGaN/GaN/InGaN/GaN DH-HEMT by Khan, Asif Abdullah; Mohammad, Shimanto; Fahim-Al-Fattah, Md.; Amin, Md. Ashiqul; Hasan, Chowdhury Zia-Ul is a scholarly article available to read on EtoBox.

Author

Khan, Asif Abdullah; Mohammad, Shimanto; Fahim-Al-Fattah, Md.; Amin, Md. Ashiqul; Hasan, Chowdhury Zia-Ul

Publisher

IEEE

Published

2017

Language

EN