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This document discusses the differences between doping a Mott insulator versus an ordinary semiconductor. When doping a Mott insulator, its Fermi volume immediately jumps to a large value proportional to n, rather than proportional to 1-n as would be expected if it corresponded to just the number of added carriers. Experiments on the lightly doped Mott insulator La1-SrTiO3 confirm that near the insulating state, the Fermi volume has its expected large or Luttinger value.

Author

Supriya

Language

EN