About this Materials Science article
1.3 μm InAs/GaAs quantum dots with broad emission spectra by Peng Tian; Lirong Huang; Bo Jiang; Shuping Fei; Dexiu Huang is a Materials Science article available to read on EtoBox.
## Abstract InAs/GaAs quantum dot (QD) structures with broad emission spectra are grown by metal‐organic chemical vapor deposition. The effects of Indium composition of InGaAs strain‐reducing layer and InAs deposited coverage on the optical properties and structural characterization of QDs are investigated using photoluminescence (PL) and atomic force microscopy. It is found that through appropriately selecting growth parameters, the full width at half maximum of PL spectrum reaches up to 183 nm around 1.3 μm, covering the range from 1156 to 1339 nm.
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- Peng Tian; Lirong Huang; Bo Jiang; Shuping Fei; Dexiu Huang
- Publisher
- John Wiley and Sons; Wiley (John Wiley & Sons); John Wiley & Sons Ltd.; Wiley; Wiley - V C H Verlag GmbbH & Co. (ISSN 0031-8965)
- Published
- 2010
- Language
- EN
- Field
- Materials Science (Physical Sciences)