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About this Engineering article
Reverse leakage mechanism of Schottky barrier diode fabricated on homoepitaxial GaN by Lei, Yong; Lu, Hai; Cao, Dongsheng; Chen, Dunjun; Zhang, Rong; Zheng, Youdou is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Lei, Yong; Lu, Hai; Cao, Dongsheng; Chen, Dunjun; Zhang, Rong; Zheng, Youdou
- Publisher
- Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 0038-1101)
- Published
- 2013
- Field
- Engineering (Physical Sciences)
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