About this Engineering article
High density and low leakage current based SRAM cell using 45 nm technology by Akashe, Shyam; Sharma, Sanjay is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Akashe, Shyam; Sharma, Sanjay
- Publisher
- Taylor and Francis Group; Informa UK (Taylor & Francis); Taylor & Francis; Informa UK Limited (ISSN 0020-7217)
- Published
- 2013
- Language
- EN
- Field
- Engineering (Physical Sciences)