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NPN Silicon Transistor Specifications by sarantapodarusa4009 is a document available to read on EtoBox.
This document provides specifications for an NPN silicon transistor including its electrical characteristics, parameters, and classifications. Key details include: - Maximum power dissipation of 0.4W at 25°C ambient temperature and collector current of 0.1A. - Breakdown voltages of 50V for collector-base, 45V for collector-emitter, and 5V for emitter-base. - Cut-off currents below 0.1A and DC current gain of 1000 typical. - Transition frequency of 150MHz and saturation voltages of 0.3V for collector-e
- Author
- sarantapodarusa4009
- Language
- EN