About this document
GaN MOSFET Driver Overview by mosTfa dehghany is a document available to read on EtoBox.
This document compares the characteristics of gallium nitride (GaN) enhancement-mode high-electron-mobility transistors (E-HEMTs) to silicon (Si) metal-oxide-semiconductor field-effect transistors (MOSFETs) and silicon carbide (SiC) MOSFETs for power switching applications. Some key advantages of GaN E-HEMTs are their much faster switching speeds, zero reverse recovery charge, and ability to operate without an antiparallel diode. However, their gate drive circuit needs protection against spikes to avoid exc
- Author
- mosTfa dehghany
- Language
- EN