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Defect-Driven UV Memristor in VO2 by Ahmad Ali Pannu is a document available to read on EtoBox.

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This research article explores defect-driven ultraviolet light perception and memristor storage in vanadium dioxide (VO2) thin films, highlighting the influence of oxygen defects and polymorphic phases on their performance. The study reveals that varying defect levels significantly affect the memristive characteristics and insulator-metal transition behaviors, which are crucial for developing advanced artificial synaptic devices. The findings suggest that defect-associated light memristors could enhance the

Author
Ahmad Ali Pannu
Language
EN

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