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What is Impact of Oxygen on ZnO:Al Thin Films about?
The study investigates the effects of oxygen ambient pressure on the structural, optical, and electrical properties of epitaxial Al-doped ZnO thin films deposited on r-plane sapphire using pulsed laser deposition. The optimal oxygen pressure of 1 mTorr resulted in the lowest resistivity of 2.14 × 10⁻³ Ω-cm and the highest carrier concentration of 6.89 × 10¹⁹ cm⁻³, along with improved surface smoothness and crystallinity. Photoluminescence analysis revealed a peak at 3.34 eV for films grown at this optimal p
- Author
- gamlunji
- Language
- EN