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A proposal for CVD growth of 15R-SiC by observing the etch pits on 15R-SiC (0 0 0 1̄) C-face by Taro Nishiguchi; Yasuichi Masuda; Satoru Ohshima; Shigehiro Nishino is a scholarly article available to read on EtoBox.

What is A proposal for CVD growth of 15R-SiC by observing the etch pits on 15R-SiC (0 0 0 1̄) C-face about?

As grown Acheson crystals of 15R-SiC and 6H-SiC were etched by molten KOH. Etch pits peculiar to each polytype were observed both on C-face and Si-face of etched crystals. The inside of etch pit on the C-face was flat. Etch pits on 6H-SiC showed six-fold symmetry, and etching rate toward six equivalent /1 1 % 2 0S was the fastest. In case of 15R-SiC, etching rate toward 1⁄21 % 1 0 0 was faster than that of 1⁄2 % 1 1 0 0; and etch pits showed three-fold symmetry. Etching rate anisotropy between 1⁄21 % 1 0 0 and 1⁄2 % 1 1 0 0 of 15R-SiC was explained by the number of dangling bonds per edge atom. Though the chemical vapor deposition (CVD) growth of 15R-SiC has been conducted on Si-face 8.01 off-oriented toward /1 1 % 2 0S; 1⁄21 1 % 2 0 and 1⁄211 2 0 might not be equivalent in 15R-SiC. If the crystal grew at near-equilibrium condition, the difference between off-orientation toward 1⁄21 1 % 2 0 and 1⁄211 2 0 might become obvious. Further research is necessary for the CVD growth of 15R-SiC to achieve high quality crystals.

Author

Taro Nishiguchi; Yasuichi Masuda; Satoru Ohshima; Shigehiro Nishino

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-0248)

Published

2002

Language

EN