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This document provides specifications and performance characteristics for the FAP-2S series N-channel silicon power MOSFET from Fuji Power. The MOSFET has a maximum drain-source voltage of 600V, continuous drain current of 9A, and pulsed drain current of 32A. It features low on-resistance, no secondary breakdown, low driving power, and avalanche-proof capability. Applications include switching regulators, UPS systems, and DC-DC converters. Tables provide information on maximum ratings, electrical characteri

Author

Gheorghe Silviu

Language

EN