About this scholarly article

2015 IEEE International Electron Devices Meeting (IEDM) - First monolithic integration of Ge P-FETs and InAs N-FETs on silicon substrate: Sub-120 nm III-V buffer, sub-5 nm ultra-thin body, common raised S/D, and gate stack modules by Yadav, Sachin; Tan, Kian-Hua; Annie, ; Goh, Kian Hui; Subramanian, Sujith; Low, Kain Lu; Chen, Nanyan; Jia, Bowen; Yoon, Soon-Fatt; Liang, Gengchiau; Gong, Xiao; Yeo, Yee-Chia is a scholarly article available to read on EtoBox.

Author

Yadav, Sachin; Tan, Kian-Hua; Annie, ; Goh, Kian Hui; Subramanian, Sujith; Low, Kain Lu; Chen, Nanyan; Jia, Bowen; Yoon, Soon-Fatt; Liang, Gengchiau; Gong, Xiao; Yeo, Yee-Chia

Publisher

IEEE

Published

2015

Language

EN