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In situ Raman growth monitoring of indium/copper phthalocyanine interfaces by Philipp Schäfer; Cameliu Himcinschi; Vasile Chis; Dietrich R. T. Zahn is a Engineering article available to read on EtoBox.

What is In situ Raman growth monitoring of indium/copper phthalocyanine interfaces about?

## Abstract Interface formation between indium and copper phthalocyanine (CuPc) is investigated using __in situ__ Raman spectroscopy. CuPc and indium are deposited onto hydrogen passivated Si (111) surfaces via molecular beam deposition under ultra high vacuum (UHV) conditions. The 647.1 nm excitation wavelength of the Krypton laser fulfils resonance conditions for the CuPc molecules and provides a reasonable signal‐to‐noise ratio for thin films in the nanometer regime even for accumulation times below one minute. Indium clusters are formed at the interface and the surface enhanced Raman spectroscopy (SERS) effect is observed. A comparison of the spectra with results of density functional theory (DFT) calculations do not support a formerly proposed structure of CuPc/indium mixed layers with covalent‐like bonds [1]. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Who reads In situ Raman growth monitoring of indium/copper phthalocyanine interfaces?

Author

Philipp Schäfer; Cameliu Himcinschi; Vasile Chis; Dietrich R. T. Zahn

Publisher

John Wiley and Sons; Wiley (John Wiley & Sons); Wiley - V C H Verlag GmbbH & Co.; Wiley (ISSN 1862-6351)

Published

2010

Language

EN

Field

Engineering (Physical Sciences)