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Amorphous TiO2 in LP-OMCVD TiNxOy thin films revealed by XPS by J. Guillot; F. Fabreguette; L. Imhoff; O. Heintz; M.C. Marco de Lucas; M. Sacilotti; B. Domenichini; S. Bourgeois is a Materials Science article available to read on EtoBox.
What is Amorphous TiO2 in LP-OMCVD TiNxOy thin films revealed by XPS about?
TiN(O)-TiO 2 thin films were prepared on Si(1 0 0) by the low pressure organo metallic chemical vapor deposition (LP-OMCVD) method, using ammonia and titanium isopropoxide as precursors. In order to complete previous characterizations, an Ar þ bombardment/XPS coupled study was carried out. This method is based on the fact that the behavior of a compound towards an ion bombardment is a function of its composition. In particular, Ar þ bombardment of TiO 2 (whatever its form) leads to a preferential sputtering of oxygen atoms with subsequent reduction of titanium and formation of Ti 3þ and Ti 2þ easily detectable by XPS from a significant broadening of the Ti 2p lines. In the opposite, no broadening of the Ti 2p lines is observed for an Ar þ bombardment of TiN. Then, with this method, we succeed in showing that films obtained at high temperature (!7008C) contain only a TiN x O y phase which is isomorphic to TiN. In the coatings, synthesized at low temperatures ( 6508C) amorphous TiO 2 has been evidenced.
Who reads Amorphous TiO2 in LP-OMCVD TiNxOy thin films revealed by XPS?
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- J. Guillot; F. Fabreguette; L. Imhoff; O. Heintz; M.C. Marco de Lucas; M. Sacilotti; B. Domenichini; S. Bourgeois
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0169-4332)
- Published
- 2001
- Language
- EN
- Field
- Materials Science (Physical Sciences)