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IEEE MTT/ED/AP/LEO Societies Joint Chapter United Kingdom and Republic of Ireland Section. 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.97TH8305) - Control of point defects and arsenic clusters in low-temperature grown GaAs by isovalent impurity doping by Chaldyshev, V.V.; Bert, N.A.; Faleev, N.N.; Kunitsyn, A.E.; Musikhin, Yu.G.; Preobrazhenskii, V.V.; Putyato, M.A.; Semyagin, B.R.; Werner, P. is a scholarly article available to read on EtoBox.

Author
Chaldyshev, V.V.; Bert, N.A.; Faleev, N.N.; Kunitsyn, A.E.; Musikhin, Yu.G.; Preobrazhenskii, V.V.; Putyato, M.A.; Semyagin, B.R.; Werner, P.
Publisher
IEEE
Published
1997
Language
EN

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