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About this Engineering article
High threshold voltages in small geometry MOS transistors due to edge contamination: Joswph H. Nevin, Sharon C. M. Chuang, J. T. Boyd, Darrel D. Donaldson, H. Thurman Henderson and Stephen A. Sefick. Microelectron. Reliab. 20, 457 (1980) is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0026-2714)
- Published
- 1981
- Field
- Engineering (Physical Sciences)