About this scholarly article

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits - Trapping/detrapping characteristics of electrons and holes under dynamic NBTI stress on HfO2 and HfSiON gate dielectrics by Wei-Liang Lin, ; Jen-Chung Lou, ; Yao-Jen Lee, ; Tien-Sheng Chao, is a scholarly article available to read on EtoBox.

Author

Wei-Liang Lin, ; Jen-Chung Lou, ; Yao-Jen Lee, ; Tien-Sheng Chao,

Publisher

IEEE

Published

2009

Language

EN