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GaAs FET Microwave Power Specs by JamesSmith2014 is a document available to read on EtoBox.

This document provides technical specifications for a microwave GaAs FET. It has the following key details: 1. It has high power output of 42.5dBm and high gain of 10dB between 4.4-5GHz. 2. Electrical characteristics include a transconductance of 3600mS and pinch-off voltage ranging from -1V to -4V. 3. It has a power added efficiency of 36% minimum and thermal resistance between 1.5-1.8°C/W.

Author

JamesSmith2014

Language

EN