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Post‐annealing effect upon phosphorus‐doped ZnTe homoepitaxial layers grown by MOVPE by Katsuhiko Saito; Kenji Fujimoto; Kouji Yamaguchi; Tooru Tanaka; Mitsuhiro Nishio; Qixin Guo; Hiroshi Ogawa is a Physics and Astronomy article available to read on EtoBox.
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## Abstract The effect of post‐annealing treatment upon the photoluminescence (PL) spectra of phosphorus‐doped ZnTe homoepitaxial layers grown by metalorganic vapour phase epitaxy using tris‐dimethylaminophosphorus (TDMAP) has been investigated. PL properties at 4 K of the layers are dramatically improved by the post‐annealing in nitrogen flow, i.e. donor–acceptor pair emission vanishes and instead free‐to‐bound transition emission (FB) and broadened acceptor‐related excitonic emission (__I__~a~) appear. PL intensity at room temperature is enhanced remarkably by the treatment. While the post‐annealing treatment in hydrogen flow also gives an increase in PL intensity at room temperature of the layer, PL spectrum at 4 K is almost unchanged. The intensity ratio of FB to broadened __I__~a~ for the layer after post‐annealing treatment in nitrogen flow increases and the broadened __I__~a~ shifts towards longer wavelength side with increasing TDMAP transport rate. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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- Author
- Katsuhiko Saito; Kenji Fujimoto; Kouji Yamaguchi; Tooru Tanaka; Mitsuhiro Nishio; Qixin Guo; Hiroshi Ogawa
- Publisher
- John Wiley and Sons; Wiley (John Wiley & Sons); John Wiley & Sons Ltd.; Wiley (ISSN 0370-1972)
- Published
- 2007
- Language
- EN
- Field
- Physics and Astronomy (Physical Sciences)