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Refined EUV Mask Model for Lithography by Gabriel Donovan is a document available to read on EtoBox.

What is Refined EUV Mask Model for Lithography about?

The document describes a refined model of an extreme ultraviolet (EUV) mask stack consisting of a Mo/Si multilayer coated with a Ru protective layer and a TaBN/TaBO absorber layer. Measurements of the EUV and X-ray reflectivity of samples were analyzed using a combined free-form analysis to develop high-resolution optical constant profiles with sublayers as thin as 0.25nm. A lower resolution model with thicker sublayers (>2nm) was also derived from the high-resolution model to reduce computational needs for

Author
Gabriel Donovan
Language
EN

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