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Dimensional Crossover Induced Topological Hall Effect in a Magnetic Topological Insulator by Liu, Chang; Zang, Yunyi; Ruan, Wei; Gong, Yan; He, Ke; Ma, Xucun; Xue, Qi-Kun; Wang, Yayu is a scholarly article available to read on EtoBox.

What is Dimensional Crossover Induced Topological Hall Effect in a Magnetic Topological Insulator about?

We report transport studies of Mn-doped Bi2Te3 topological insulator (TI) films with accurately controlled thickness grown by molecular beam epitaxy. We find that films thicker than 5 quintuple-layer (QL) exhibit the usual anomalous Hall effect for magnetic TIs. When the thickness is reduced to 4 QL, however, characteristic features associated with the topological Hall effect (THE) emerge. More surprisingly, the THE vanishes again when the film thickness is further reduced to 3 QL. Theoretical calculations demonstrate that the coupling between the top and bottom surface states at the dimensional crossover regime stabilizes the magnetic skyrmion structure that is responsible for the THE.

Author

Liu, Chang; Zang, Yunyi; Ruan, Wei; Gong, Yan; He, Ke; Ma, Xucun; Xue, Qi-Kun; Wang, Yayu

Published

2017

Language

EN