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About this Engineering article
1300-V 6H-SiC lateral MOSFETs with two RESURF zones by Banerjee, S.; Chow, T.P.; Gutmann, R.J. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Banerjee, S.; Chow, T.P.; Gutmann, R.J.
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0741-3106)
- Published
- 2002
- Field
- Engineering (Physical Sciences)