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Electrical characterization and carrier transport mechanisms of GaAs p/i/n devices for photovoltaic applications by N. Konofaos; E.K. Evangelou; F. Scholz; K. Zieger; E. Aperathitis is a Materials Science article available to read on EtoBox.

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GaAs p/i/n diodes made by Metal-Organic Vapour Phase Epitaxy were examined by electrical measurements for evaluating the optimum i-region for use as solar cells. Four series of samples were prepared and studied each one with a different i-region width. The performance of the devices was examined by means of Admittance spectroscopy as well as classical current-voltage and capacitance-voltage characterization, allowing the calculation of the minority carriers lifetime (~e ff ) and the diodes ideality factors. The values of the ~eff were found to lie between 8.7 ps and 0.14 ns for i-region widths between 0 and 0.8 mm. These results were used to model the multilayer structure with the two-diode representation and explain the conductance mechanisms inside the diodes. This modeling showed that the recombination/generation currents were dominating in forward biased diodes and the ohmic loss current in reverse bias.

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Author

N. Konofaos; E.K. Evangelou; F. Scholz; K. Zieger; E. Aperathitis

Publisher

Elsevier Science; Elsevier ; Elsevier Ltd; Elsevier BV (ISSN 0921-5107)

Published

2001

Language

EN

Field

Materials Science (Physical Sciences)