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Development of Bi2S3 thin film solar cells by close-spaced sublimation and analysis of absorber bulk defects via in-depth photoluminescence analysis by M. Koltsov; S.V. Gopi; T. Raadik; J. Krustok; R. Josepson; R. Gržibovskis; A. Vembris; N. Spalatu is a scholarly article available to read on EtoBox.

What is Development of Bi2S3 thin film solar cells by close-spaced sublimation and analysis of absorber bulk defects via in-depth photoluminescence analysis about?

The emergence of new PV applications in society requires the design of new materials and devices based on green and earth-abundant elements, with a different set of properties and wider applicability. In this perspective, Bi2S3 semiconductor material have gained attention as a defect-tolerant, non-toxic, and highly stable material for earth-abundant thin film PV technologies. Related to Bi2S3 non-toxic nature, so far it has been very popular to synthesize the material by chemical solution routes, while little research efforts have been dedicated to absorber deposition by physical deposition techniques. In particular, there are no studies on absorber development via rapid, high-volume, and in-line close-spaced sublimation technique. Moreover, in-depth analysis of material defects employing low temperature-dependent photoluminescence (PL) remains largely unexplored. In this work, we systematically study the impact of close-spaced sublimation (CSS) conditions on Bi2S3 absorber growth on various substrates, employing a wide range of source (400–600 °C) and substrate (200–400 °C) temperatures. CSS source temperature of 550 °C and substrate temperature of 400–450 °C were identified as op

Author

M. Koltsov; S.V. Gopi; T. Raadik; J. Krustok; R. Josepson; R. Gržibovskis; A. Vembris; N. Spalatu

Publisher

Elsevier BV

Published

2023

Language

EN