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High Efficiency RF Power Transistor Specs by ETIENNE ABOULAYE NDIAYE is a document available to read on EtoBox.
What is High Efficiency RF Power Transistor Specs about?
The document provides specifications for Polyfet RF devices, specifically the LK721 model, which features silicon VDMOS and LDMOS transistors designed for broadband RF applications. It includes details on absolute maximum ratings, RF characteristics, electrical characteristics, and performance metrics such as power gain and efficiency. The device is suitable for various applications including military radios and cellular amplifiers, with a focus on high efficiency and low noise.
- Author
- ETIENNE ABOULAYE NDIAYE
- Language
- EN