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Advances in Plasma Processing For WBG Power Electronics: Mark Dineen, PH.D by ktshjzkngs is a document available to read on EtoBox.

The document discusses advancements in plasma processing technologies for wide bandgap (WBG) power electronics, particularly focusing on GaN devices. It highlights the challenges and solutions for E-mode GaN HEMTs, including Atomic Layer Etching (ALE) and Atomic Layer Deposition (ALD) processes. The conclusion emphasizes the importance of these technologies for reliable manufacturing and the ease of transferring processes from research to high-volume manufacturing.

Author
ktshjzkngs
Language
EN