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Can I read Effect of Local Surface Structure on Electronic Properties of Hydrogenated Silicon Surfaces on EtoBox?
Effect of Local Surface Structure on Electronic Properties of Hydrogenated Silicon Surfaces by Th. Dittrich; V.Yu. Timoshenko; M. Schwartzkopff; E. Hartmann; J. Rappich; P.K. Kashkarov; F. Koch is a Engineering article available to read on EtoBox.
What is Effect of Local Surface Structure on Electronic Properties of Hydrogenated Silicon Surfaces about?
Morphology and electronic properties of hydrogenated Si surfaces are studied by scanning tunneling microscopy and by methods of surface photovoltage and photoluminescence (PL), respectively. The microscopic roughness on the nm scale is more important than the macroscopic roughness of a hydrogenated Si surface for the densities of nonmdiative surface defects and hole traps. The adsorption of water or oxygen molecules on a hydrogenated Si surface leads to an increase of the intensity of interband PL of c-Si which is controlled by surface nonradiative recombination. This effect is interpreted as a decrease of the recombination cross section of a nonradiative surface defect due to charge trapped at the adsorbed molecules.
Who reads Effect of Local Surface Structure on Electronic Properties of Hydrogenated Silicon Surfaces?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Th. Dittrich; V.Yu. Timoshenko; M. Schwartzkopff; E. Hartmann; J. Rappich; P.K. Kashkarov; F. Koch
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0167-9317)
- Published
- 1999
- Language
- EN
- Field
- Engineering (Physical Sciences)