Can I read Magnetic Dirac Fermions and Chern Insulator Supported on Pristine Silicon Surface on EtoBox?

Magnetic Dirac Fermions and Chern Insulator Supported on Pristine Silicon Surface by Fu, Huixia; Liu, Zheng; Lian, Chao; Zhang, Jin; Li, Hui; Sun, Jia-Tao; Meng, Sheng is a scholarly article available to read on EtoBox.

What is Magnetic Dirac Fermions and Chern Insulator Supported on Pristine Silicon Surface about?

Emergence of ferromagnetism in non-magnetic semiconductors is strongly desirable, especially in topological materials thanks to the possibility to achieve quantum anomalous Hall effect. Based on first-principles calculations, we propose that for Si thin film grown on metal substrate, the pristine Si(111)-root3xroot3 surface with a spontaneous weak reconstruction has a strong tendency of ferromagnetism and nontrivial topological properties, characterized by spin polarized Dirac-fermion surface states. In contrast to conventional routes relying on introduction of alien charge carriers or specially patterned substrates, the spontaneous magnetic order and spin-orbit coupling on the pristine silicon surface together gives rise to quantized anomalous Hall effect with a finite Chern number C=-1. This work suggests exciting opportunities in silicon-based spintronics and quantum computing free from alien dopants or proximity effects.

Author

Fu, Huixia; Liu, Zheng; Lian, Chao; Zhang, Jin; Li, Hui; Sun, Jia-Tao; Meng, Sheng

Published

2016

Language

EN