About this scholarly article

2016 International Conference on VLSI Systems, Architectures, Technology and Applications (VLSI-SATA) - Performance of asymmetric gate oxide on gate-drain overlap in Si and Si1−xGex double gate tunnel FETs by Poorvasha, S.; Lakshmi, B. is a scholarly article available to read on EtoBox.

Author

Poorvasha, S.; Lakshmi, B.

Publisher

IEEE

Published

2016

Language

EN