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About this Engineering article
Carrier profiling of Al-doped 4H-SiC by scanning spreading resistance microscopy by Osterman, J.; Hallén, A.; Anand, S is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Osterman, J.; Hallén, A.; Anand, S
- Publisher
- American Institute of Physics; AIP Publishing (ISSN 0003-6951)
- Published
- 2002
- Language
- EN
- Field
- Engineering (Physical Sciences)