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Effect of thickness and heat treatment on the electrical and optical properties of (Ge2S3)1(Sb2Se3)1 thin films by E. Abd El-Wahabb; M.M. El-Samanoudy; M. Fadel is a Materials Science article available to read on EtoBox.

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An investigation of the electrical and optical properties of (Ge 2 S 3 ) 1 (Sb 2 Se 3 ) 1 , Sb 2 Se 3 , and Ge 2 S 3 thin ®lms prepared by thermal evaporation having different thicknesses and annealing temperatures has been carried out. The structure of synthesised glass and thin ®lms were characterised by X-ray diffraction (XRD). The electrical conductivity was measured in the temperature range 300±498 K and thickness range 48.1±401.4 nm. The effect of the thickness and heat treatment on the activation energy DE for dc conductivity and the density of localised states at the Fermi level N(E f ) were studied. The electrical conductivity measurements depend on the thickness and annealing temperature and exhibit two types of conduction channels that contribute to two conduction mechanisms. Optical absorption measurements have been made on as-deposited and annealed ®lms for (Ge 2 S 3 ) 1 (Sb 2 Se 3 ) 1 , Sb 2 Se 3 and Ge 2 S 3 amorphous thin ®lms. The mechanism of the optical absorption follows the rule of direct forbidden transition. The optical energy gap (E opt ) increased from 1.37 to 1.80 eV with increasing the thickness. Also E opt increases with increasing the annealing temperat

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Author

E. Abd El-Wahabb; M.M. El-Samanoudy; M. Fadel

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0169-4332)

Published

2001

Language

EN

Field

Materials Science (Physical Sciences)