About this scholarly article

IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - Modulation of drain current by redox-active molecules incorporated in Si MOSFETs by Gowda, S.; Mathur, G.; Qiliang Li, ; Surthi, S.; Qian Zhao, ; Lindsey, J.S.; Bocian, D.F.; Misra, V. is a scholarly article available to read on EtoBox.

Author

Gowda, S.; Mathur, G.; Qiliang Li, ; Surthi, S.; Qian Zhao, ; Lindsey, J.S.; Bocian, D.F.; Misra, V.

Publisher

IEEE

Published

2004

Language

EN