Opening book details…
About this Engineering article
A High-speed Silicon Single-electron Random Access Memory by Stone, N.J.; Ahmed, H.; Nakazato, K. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Stone, N.J.; Ahmed, H.; Nakazato, K.
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0741-3106)
- Published
- 1999
- Field
- Engineering (Physical Sciences)