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Effect of period of the electron emitter MQW structure on the improvement of characteristics in nitride-based LEDs by Y. K. Su; J. J. Chen; C. L. Lin; C. C. Kao; C. T. Lin is a Engineering article available to read on EtoBox.

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## Abstract The effect of period of electron emitter multiple‐quantum well (EE‐MQW) structure on the structural, electrical, and optical characteristics of nitride‐based light‐emitting diodes (LEDs) were investigated. From the lattice constant results of InGaN/GaN multiple‐quantum well (MQW) by the high resolution X‐ray diffraction, the compressive strain of InGaN/GaN MQW could be released gradually when the period of EE‐MQW structure increases. Therefore, the leakage current reduces and the ESD endurance ability enhances with increasing period of EE‐MQW structure. On the other hand, the electron injection efficiency will also be improved by inserting EE‐MQW structure. When the period of EE‐MQW structure increases, the forward voltage and series resistance both decrease. Due to the improved electron injection efficiency and crystalline quality, the luminance intensity increases with increasing period of EE‐MQW structure. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Who reads Effect of period of the electron emitter MQW structure on the improvement of characteristics in nitride-based LEDs?

Author

Y. K. Su; J. J. Chen; C. L. Lin; C. C. Kao; C. T. Lin

Publisher

John Wiley and Sons; Wiley (John Wiley & Sons); Wiley - V C H Verlag GmbbH & Co.; Wiley (ISSN 1862-6351)

Published

2010

Language

EN

Field

Engineering (Physical Sciences)