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ZnO thin film grown on silicon by metal-organic chemical vapor deposition by Xinqiang Wang; Shuren Yang; Xiaotian Yang; Dan Liu; Yuantao Zhang; Jinzhong Wang; Jingzhi Yin; Dali Liu; H.C Ong; Guotong Du is a Engineering article available to read on EtoBox.

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We deposited ZnO thin films on (0 0 1) Si substrate by metal-organic chemical vapor deposition. We found strong diffraction (0 0 2) peak at 34.761 and (0 0 4) peak at 72.841 indicating that ZnO thin film was strongly C-oriented. The full-width at half-maximum of (0 0 2) peak was 0.191. ZnO film was highly transparent with a transmission ratio larger than 80% in the visible range. Ultraviolet emission was observed while deep level emission could hardly been observed in room temperature photoluminescence spectra. From temperature-dependent spectra of 300-80 K, we could observe neutral donor (D1X) bound exciton emission clearly and free-exciton emission dominated the spectrum when the temperature was above 220 K. X-ray photoemission spectra showed that ZnO film was Zn-rich with O:Zn=0.93:1.

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Author

Xinqiang Wang; Shuren Yang; Xiaotian Yang; Dan Liu; Yuantao Zhang; Jinzhong Wang; Jingzhi Yin; Dali Liu; H.C Ong; Guotong Du

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-0248)

Published

2002

Language

EN

Field

Engineering (Physical Sciences)