Opening book details…
About this Engineering article
Hole Transport in Strained and Relaxed SiGe Channel Extremely Thin SOI MOSFETs by Khakifirooz, Ali; Cheng, Kangguo; Loubet, Nicolas; Nagumo, Toshiharu; Reznicek, Alexander; Liu, Qing; Levin, Theodore M.; Edge, Lisa F.; He, Hong; Kuss, James; Allibert, Frederic; Nguyen, Bich-Yen; Doris, Bruce; Shahidi, Ghavam is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Khakifirooz, Ali; Cheng, Kangguo; Loubet, Nicolas; Nagumo, Toshiharu; Reznicek, Alexander; Liu, Qing; Levin, Theodore M.; Edge, Lisa F.; He, Hong; Kuss, James; Allibert, Frederic; Nguyen, Bich-Yen; Doris, Bruce; Shahidi, Ghavam
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0741-3106)
- Published
- 2013
- Language
- EN
- Field
- Engineering (Physical Sciences)